Rapid Raman Quality Analysis of CVD Graphene Directly on Growth Substrates

Mathieu Monville¹*, Alexander Rzhevskii², Subarna Banerjee¹, Karlheinz Strobl¹
¹CVD Equipment Corporation, 1860 Smithtown Avenue, Ronkonkoma, NY 11779, USA
²Thermo Fisher Scientific, 800 Middlesex Turnpike, Billerica, MA 01821, USA


Raman spectroscopy is commonly used as a standard quality analysis technique for graphene characterization since it allows unambiguous, high-throughput, nondestructive identification of the number of graphene layers. It also allows to qualify defect, doping, strain, disorder and chemical modifications levels, as well as to locate grain boundaries of graphene. Many of these quality parameters need to be monitored during process and/or