Vertically Aligned SiNW Arrays with TCS as Precursor

Mathieu R. Monville1, Shihsheng Chang1, Samuel Wright1, Karlheinz Strobl1
CVD Equipment Corporation, 355 S. Technology Drive, Central Islip, New York 11722, USA

Abstract

Silicon nanowires (SiNWs) attract growing interest due to their high multi-functional potential, spanning from energy harvesting and storage, thermoelectricity, and protein detection to gas sensing applications.

A narrow distribution in properties (length, diameter, doping levels) and microscopic arrangement are sought-after for most applications for which reducing materials production costs is often a necessary condition for development. Specific arrangement of silicon nanowires vertically or even horizontally